High performance MoS₂ transistors based on wafer-scale low-temperature MOCVD synthesis
Among all the possible back-end-of-line (BEOL) solutions to improve the integration density and functionality of conventional silicon circuits, two-dimensional (2D) material devices are believed to be very promising, due to their high mobility, relatively large band gaps, atom-level thickness, perfo...
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| Format: | Thesis |
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Massachusetts Institute of Technology
2022
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| Online Access: | https://hdl.handle.net/1721.1/140004 https://orcid.org/0000-0001-7319-3913 |