Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma

Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma

Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si with a relatively high deposition uniformit...

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Bibliographic Details
Main Authors: Kim, Ki Seok, Ji, You-Jin, Kim, Ki-Hyun, Kang, Ji-Eun, Ellingboe, Albert Rogers, Yeom, Geun Young
Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics
Format: Article
Published: MDPI AG 2022
Online Access:https://hdl.handle.net/1721.1/140290

Internet

https://hdl.handle.net/1721.1/140290

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