Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma
Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si with a relatively high deposition uniformit...
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
MDPI AG
2022
|
| Online Access: | https://hdl.handle.net/1721.1/140290 |
| _version_ | 1826199876630740992 |
|---|---|
| author | Kim, Ki Seok Ji, You-Jin Kim, Ki-Hyun Kang, Ji-Eun Ellingboe, Albert Rogers Yeom, Geun Young |
| author2 | Massachusetts Institute of Technology. Research Laboratory of Electronics |
| author_facet | Massachusetts Institute of Technology. Research Laboratory of Electronics Kim, Ki Seok Ji, You-Jin Kim, Ki-Hyun Kang, Ji-Eun Ellingboe, Albert Rogers Yeom, Geun Young |
| author_sort | Kim, Ki Seok |
| collection | MIT |
| description | Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si with a relatively high deposition uniformity of 6.7% could be obtained due to the formation of high-ion-density (>10<sup>11</sup> cm<sup>−3</sup>) plasma with SiH<sub>4</sub> and a lack of standing waves by using small multi-split electrodes. The increase in the radio frequency (RF) power decreased the hydrogen content in the deposited silicon film and, at a high RF power of 2000 W, a-Si with a low hydrogen content of 3.78% could be deposited without the need for a dehydrogenation process. The crystallization of the a-Si by ultraviolet (UV) irradiation showed that the a-Si can be crystallized with a crystallinity of 0.8 and a UV energy of 80 J without dehydrogenation. High-resolution transmission electron microscopy showed that the a-Si deposited by the VHF plasma was a very small nanocrystalline-like a-Si and the crystalline size significantly grew with the UV irradiation. We believe that the VHF (162 MHz) multi-split plasma system can be used for a low-cost low-temperature polysilicon (LTPS) process. |
| first_indexed | 2024-09-23T11:27:13Z |
| format | Article |
| id | mit-1721.1/140290 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T11:27:13Z |
| publishDate | 2022 |
| publisher | MDPI AG |
| record_format | dspace |
| spelling | mit-1721.1/1402902024-06-07T17:26:11Z Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma Kim, Ki Seok Ji, You-Jin Kim, Ki-Hyun Kang, Ji-Eun Ellingboe, Albert Rogers Yeom, Geun Young Massachusetts Institute of Technology. Research Laboratory of Electronics Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si with a relatively high deposition uniformity of 6.7% could be obtained due to the formation of high-ion-density (>10<sup>11</sup> cm<sup>−3</sup>) plasma with SiH<sub>4</sub> and a lack of standing waves by using small multi-split electrodes. The increase in the radio frequency (RF) power decreased the hydrogen content in the deposited silicon film and, at a high RF power of 2000 W, a-Si with a low hydrogen content of 3.78% could be deposited without the need for a dehydrogenation process. The crystallization of the a-Si by ultraviolet (UV) irradiation showed that the a-Si can be crystallized with a crystallinity of 0.8 and a UV energy of 80 J without dehydrogenation. High-resolution transmission electron microscopy showed that the a-Si deposited by the VHF plasma was a very small nanocrystalline-like a-Si and the crystalline size significantly grew with the UV irradiation. We believe that the VHF (162 MHz) multi-split plasma system can be used for a low-cost low-temperature polysilicon (LTPS) process. 2022-02-11T17:29:09Z 2022-02-11T17:29:09Z 2022-01-24 2022-02-11T14:46:27Z Article http://purl.org/eprint/type/JournalArticle 2072-666X https://hdl.handle.net/1721.1/140290 Kim, K.S.; Ji, Y.-J.; Kim, K.-H.; Kang, J.-E.; Ellingboe, A.R.; Yeom, G.Y. Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma. Micromachines 13 (2): 173 (2022) 10.3390/mi13020173 Micromachines Creative Commons Attribution https://creativecommons.org/licenses/by/4.0/ application/pdf MDPI AG Multidisciplinary Digital Publishing Institute |
| spellingShingle | Kim, Ki Seok Ji, You-Jin Kim, Ki-Hyun Kang, Ji-Eun Ellingboe, Albert Rogers Yeom, Geun Young Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma |
| title | Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma |
| title_full | Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma |
| title_fullStr | Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma |
| title_full_unstemmed | Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma |
| title_short | Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma |
| title_sort | deposition of very low hydrogen containing silicon at a low temperature using very high frequency 162 mhz sih4 plasma |
| url | https://hdl.handle.net/1721.1/140290 |
| work_keys_str_mv | AT kimkiseok depositionofverylowhydrogencontainingsiliconatalowtemperatureusingveryhighfrequency162mhzsih4plasma AT jiyoujin depositionofverylowhydrogencontainingsiliconatalowtemperatureusingveryhighfrequency162mhzsih4plasma AT kimkihyun depositionofverylowhydrogencontainingsiliconatalowtemperatureusingveryhighfrequency162mhzsih4plasma AT kangjieun depositionofverylowhydrogencontainingsiliconatalowtemperatureusingveryhighfrequency162mhzsih4plasma AT ellingboealbertrogers depositionofverylowhydrogencontainingsiliconatalowtemperatureusingveryhighfrequency162mhzsih4plasma AT yeomgeunyoung depositionofverylowhydrogencontainingsiliconatalowtemperatureusingveryhighfrequency162mhzsih4plasma |