Refractory doped titanium nitride nanoscale field emitters

Refractory doped titanium nitride nanoscale field emitters

<jats:title>Abstract</jats:title> <jats:p>Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and opti...

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Bibliographic Details
Main Authors: Nardi, A, Turchetti, M, Britton, WA, Chen, Y, Yang, Y, Dal Negro, L, Berggren, KK, Keathley, PD
Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics
Format: Article
Language:English
Published: IOP Publishing 2022
Online Access:https://hdl.handle.net/1721.1/142781

Internet

https://hdl.handle.net/1721.1/142781

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