Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays
AlGaN alloys are promising for field emission devices due to their low electron affinities. However, there have been limited demonstrations of AlGaN vacuum transistors so far. This paper combines a new self-alignedgate (SAG) process and digital-etching tip sharpening to demonstrate three-terminal Al...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2022
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| Online Access: | https://hdl.handle.net/1721.1/143697 |