Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays
AlGaN alloys are promising for field emission devices due to their low electron affinities. However, there have been limited demonstrations of AlGaN vacuum transistors so far. This paper combines a new self-alignedgate (SAG) process and digital-etching tip sharpening to demonstrate three-terminal Al...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2022
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| Online Access: | https://hdl.handle.net/1721.1/143697 |
| _version_ | 1826208127282839552 |
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| author | Shih, Pao-Chuan Rughoobur, Girish Engel, Zachary Ahmad, Habib Doolittle, William Alan Akinwande, Akintunde I. Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Shih, Pao-Chuan Rughoobur, Girish Engel, Zachary Ahmad, Habib Doolittle, William Alan Akinwande, Akintunde I. Palacios, Tomas |
| author_sort | Shih, Pao-Chuan |
| collection | MIT |
| description | AlGaN alloys are promising for field emission devices due to their low electron affinities. However, there have been limited demonstrations of AlGaN vacuum transistors so far. This paper combines a new self-alignedgate (SAG) process and digital-etching tip sharpening to demonstrate three-terminal AlGaN SAG field emitter arrays (FEAs). These devices show a turn-on voltage of 19.5 V and an anode current density (JA) of 100 mA/cm2 at an overdrive voltage of 20 V, which are comparable with best Si devices. The AlGaN SAGFEAs can operate in DC mode at a fixed gate-emitter voltage (VGE) with JA of 3-5 mA/cm2 for at least 5 hours without a significant degradation. The gate leakage does not increase after the long DC operation, suggesting high-performance and stable AlGaN vacuum transistors. |
| first_indexed | 2024-09-23T14:00:56Z |
| format | Article |
| id | mit-1721.1/143697 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T14:00:56Z |
| publishDate | 2022 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1436972023-01-23T20:27:04Z Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays Shih, Pao-Chuan Rughoobur, Girish Engel, Zachary Ahmad, Habib Doolittle, William Alan Akinwande, Akintunde I. Palacios, Tomas Massachusetts Institute of Technology. Microsystems Technology Laboratories AlGaN alloys are promising for field emission devices due to their low electron affinities. However, there have been limited demonstrations of AlGaN vacuum transistors so far. This paper combines a new self-alignedgate (SAG) process and digital-etching tip sharpening to demonstrate three-terminal AlGaN SAG field emitter arrays (FEAs). These devices show a turn-on voltage of 19.5 V and an anode current density (JA) of 100 mA/cm2 at an overdrive voltage of 20 V, which are comparable with best Si devices. The AlGaN SAGFEAs can operate in DC mode at a fixed gate-emitter voltage (VGE) with JA of 3-5 mA/cm2 for at least 5 hours without a significant degradation. The gate leakage does not increase after the long DC operation, suggesting high-performance and stable AlGaN vacuum transistors. AFOSR through MURI ESE program 2022-07-13T13:56:42Z 2022-07-13T13:56:42Z 2022 Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 https://hdl.handle.net/1721.1/143697 Shih, Pao-Chuan, Rughoobur, Girish, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan et al. 2022. "Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays." IEEE Electron Device Letters. 10.1109/LED.2022.3184996 10.1109/led.2022.3184996 IEEE Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Pao-Chuan Shih |
| spellingShingle | Shih, Pao-Chuan Rughoobur, Girish Engel, Zachary Ahmad, Habib Doolittle, William Alan Akinwande, Akintunde I. Palacios, Tomas Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays |
| title | Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays |
| title_full | Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays |
| title_fullStr | Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays |
| title_full_unstemmed | Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays |
| title_short | Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays |
| title_sort | stable and high performance algan self aligned gate field emitter arrays |
| url | https://hdl.handle.net/1721.1/143697 |
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