Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

<jats:title>Abstract</jats:title> <jats:p>We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal Al-polar AlN layers grown on sapphire substrates. By anneali...

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Bibliographic Details
Main Authors: Okumura, Hironori, Watanabe, Yasuhiro, Shibata, Tomohiko, Yoshizawa, Kohei, Uedono, Akira, Tokunaga, Hiroki, Koseki, Shuuichi, Arimura, Tadanobu, Suihkonen, Sami, Palacios, Tomás
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: IOP Publishing 2022
Online Access:https://hdl.handle.net/1721.1/143830

Internet

https://hdl.handle.net/1721.1/143830

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