Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
While GaN-based transistors for power electronics have in many situations demonstrated technological superiority over conventional Si based devices, the development of GaN power electronics has only scratched the surface of the possibilities that lie ahead. The most promising device structure for po...
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| Format: | Thesis |
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Massachusetts Institute of Technology
2022
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| Online Access: | https://hdl.handle.net/1721.1/144579 |