Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

<jats:p> In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in...

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Bibliographic Details
Main Authors: Lee, Ethan S, Joh, Jungwoo, Lee, Dong Seup, del Alamo, Jesús A
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: AIP Publishing 2022
Online Access:https://hdl.handle.net/1721.1/145471

Internet

https://hdl.handle.net/1721.1/145471

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