Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs
<jats:p> In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing
2022
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| Online Access: | https://hdl.handle.net/1721.1/145471 |
| _version_ | 1826212755554697216 |
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| author | Lee, Ethan S Joh, Jungwoo Lee, Dong Seup del Alamo, Jesús A |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lee, Ethan S Joh, Jungwoo Lee, Dong Seup del Alamo, Jesús A |
| author_sort | Lee, Ethan S |
| collection | MIT |
| description | <jats:p> In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and subthreshold swing scaling dependence with gate geometry that is in contrast with classic field-effect transistors. On the other hand, peak transconductance and ON resistance are found to scale classically. We find that these results arise from the fact that with a Schottky contact to the p-GaN layer, under steady-state conditions, the p-GaN layer voltage is set by current continuity across the gate stack. Furthermore, a detailed scaling study of the gate current reveals that current flow across the p-GaN/AlGaN/GaN heterostructure is not uniform—instead, it preferentially flows through the ungated portion of the p-GaN layer. Our study concludes that in Schottky-type p-GaN gate HEMTs, the respective areas of two junctions constitute an additional design degree of freedom to fine-tune device performance. </jats:p> |
| first_indexed | 2024-09-23T15:37:23Z |
| format | Article |
| id | mit-1721.1/145471 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:37:23Z |
| publishDate | 2022 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1454712022-09-29T15:06:07Z Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs Lee, Ethan S Joh, Jungwoo Lee, Dong Seup del Alamo, Jesús A Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories <jats:p> In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and subthreshold swing scaling dependence with gate geometry that is in contrast with classic field-effect transistors. On the other hand, peak transconductance and ON resistance are found to scale classically. We find that these results arise from the fact that with a Schottky contact to the p-GaN layer, under steady-state conditions, the p-GaN layer voltage is set by current continuity across the gate stack. Furthermore, a detailed scaling study of the gate current reveals that current flow across the p-GaN/AlGaN/GaN heterostructure is not uniform—instead, it preferentially flows through the ungated portion of the p-GaN layer. Our study concludes that in Schottky-type p-GaN gate HEMTs, the respective areas of two junctions constitute an additional design degree of freedom to fine-tune device performance. </jats:p> 2022-09-19T12:24:49Z 2022-09-19T12:24:49Z 2022 2022-09-19T12:13:57Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/145471 Lee, Ethan S, Joh, Jungwoo, Lee, Dong Seup and del Alamo, Jesús A. 2022. "Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs." Applied Physics Letters, 120 (8). en 10.1063/5.0084123 Applied Physics Letters Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf AIP Publishing American Institute of Physics (AIP) |
| spellingShingle | Lee, Ethan S Joh, Jungwoo Lee, Dong Seup del Alamo, Jesús A Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs |
| title | Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs |
| title_full | Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs |
| title_fullStr | Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs |
| title_full_unstemmed | Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs |
| title_short | Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs |
| title_sort | gate geometry dependence of electrical characteristics of p gan gate hemts |
| url | https://hdl.handle.net/1721.1/145471 |
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