Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs
<jats:p> In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in...
| Autors principals: | , , , |
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| Altres autors: | |
| Format: | Article |
| Idioma: | English |
| Publicat: |
AIP Publishing
2022
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| Accés en línia: | https://hdl.handle.net/1721.1/145471 |