GaN Electronics for High-Temperature Applications
Gallium nitride is a promising candidate for harsh environment electronics, thanks to its excellent material properties, which have given rise to high-performance (room temperature) transistors for RF, power, MEMS, and mixed-signal applications. Previous works on high-temperature (HT) electronics ha...
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| Format: | Thesis |
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Massachusetts Institute of Technology
2023
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| Online Access: | https://hdl.handle.net/1721.1/147361 https://orcid.org/0000-0003-2615-7623 |