GaN Electronics for High-Temperature Applications
Gallium nitride is a promising candidate for harsh environment electronics, thanks to its excellent material properties, which have given rise to high-performance (room temperature) transistors for RF, power, MEMS, and mixed-signal applications. Previous works on high-temperature (HT) electronics ha...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Published: |
Massachusetts Institute of Technology
2023
|
| Online Access: | https://hdl.handle.net/1721.1/147361 https://orcid.org/0000-0003-2615-7623 |
| _version_ | 1811090025992945664 |
|---|---|
| author | Yuan, Mengyang |
| author2 | Palacios, Tomás |
| author_facet | Palacios, Tomás Yuan, Mengyang |
| author_sort | Yuan, Mengyang |
| collection | MIT |
| description | Gallium nitride is a promising candidate for harsh environment electronics, thanks to its excellent material properties, which have given rise to high-performance (room temperature) transistors for RF, power, MEMS, and mixed-signal applications. Previous works on high-temperature (HT) electronics have been typically limited to two aspects, namely, the high-temperature robustness of discrete transistors and basic circuit building blocks, which are mainly combinational logic. While these studies offer a strong indication of the potential of GaN transistor technology for HT applications, the development of HT (500 °C) GaN-ICs is still at its early stage due to the low degree of complexity and integration demonstrated so far.
Major challenges in the realization of GaN HT-robust sequential logic circuits or more complex systems is the lack of a scalable technology.
This thesis aims to advance the integration technology of GaN HT electronics by demonstrating a comprehensive HT (500°C) enhancement-mode (E-mode) GaN-on-Si technology from device to circuit perspectives: (1) a scalable device technology based on p-GaN-gate AlGaN/GaN HEMTs with high uniformity, which is optimized for HT operation and demonstrated to offer robust performance at least up to 500 °C with the help of in-house developed packaging technology and characterization platform, (2) compact modeling of monolithically integrated enhancement/depletion-mode HEMTs up to 500 °C HEMTs, (3) robustness-driven circuit design based on GaN technology, (4) demonstration of GaN-based combinational and sequential building blocks including inverter, NAND, NOR, ring oscillators, ROM, SRAM, D Latch, D Flip-Flop operational up to 500 °C. |
| first_indexed | 2024-09-23T14:30:40Z |
| format | Thesis |
| id | mit-1721.1/147361 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T14:30:40Z |
| publishDate | 2023 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/1473612023-01-20T03:17:40Z GaN Electronics for High-Temperature Applications Yuan, Mengyang Palacios, Tomás Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gallium nitride is a promising candidate for harsh environment electronics, thanks to its excellent material properties, which have given rise to high-performance (room temperature) transistors for RF, power, MEMS, and mixed-signal applications. Previous works on high-temperature (HT) electronics have been typically limited to two aspects, namely, the high-temperature robustness of discrete transistors and basic circuit building blocks, which are mainly combinational logic. While these studies offer a strong indication of the potential of GaN transistor technology for HT applications, the development of HT (500 °C) GaN-ICs is still at its early stage due to the low degree of complexity and integration demonstrated so far. Major challenges in the realization of GaN HT-robust sequential logic circuits or more complex systems is the lack of a scalable technology. This thesis aims to advance the integration technology of GaN HT electronics by demonstrating a comprehensive HT (500°C) enhancement-mode (E-mode) GaN-on-Si technology from device to circuit perspectives: (1) a scalable device technology based on p-GaN-gate AlGaN/GaN HEMTs with high uniformity, which is optimized for HT operation and demonstrated to offer robust performance at least up to 500 °C with the help of in-house developed packaging technology and characterization platform, (2) compact modeling of monolithically integrated enhancement/depletion-mode HEMTs up to 500 °C HEMTs, (3) robustness-driven circuit design based on GaN technology, (4) demonstration of GaN-based combinational and sequential building blocks including inverter, NAND, NOR, ring oscillators, ROM, SRAM, D Latch, D Flip-Flop operational up to 500 °C. Ph.D. 2023-01-19T18:48:09Z 2023-01-19T18:48:09Z 2022-09 2022-10-19T19:11:48.970Z Thesis https://hdl.handle.net/1721.1/147361 https://orcid.org/0000-0003-2615-7623 In Copyright - Educational Use Permitted Copyright MIT http://rightsstatements.org/page/InC-EDU/1.0/ application/pdf Massachusetts Institute of Technology |
| spellingShingle | Yuan, Mengyang GaN Electronics for High-Temperature Applications |
| title | GaN Electronics for High-Temperature Applications |
| title_full | GaN Electronics for High-Temperature Applications |
| title_fullStr | GaN Electronics for High-Temperature Applications |
| title_full_unstemmed | GaN Electronics for High-Temperature Applications |
| title_short | GaN Electronics for High-Temperature Applications |
| title_sort | gan electronics for high temperature applications |
| url | https://hdl.handle.net/1721.1/147361 https://orcid.org/0000-0003-2615-7623 |
| work_keys_str_mv | AT yuanmengyang ganelectronicsforhightemperatureapplications |