Current-induced Dynamics of Easy-Plane Antiferromagnets
Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especiall...
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| Format: | Thesis |
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Massachusetts Institute of Technology
2023
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| Online Access: | https://hdl.handle.net/1721.1/150107 https://orcid.org/0000-0003-4171-9866 |