Geometrical Optimization of Planar Nano Vacuum Channel Transistors

Nano vacuum devices have demonstrated tunneling emission in low voltages due to their 10 nm scale gaps that create order 10 GV/m electric fields with just 10 V. The small gaps give rise to ballistic transport through the channel, which combined with the low capacitances of the electrodes, gives rise...

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Bibliographic Details
Main Author: Bechhofer, Adina R.
Other Authors: Daniel, Luca
Format: Thesis
Published: Massachusetts Institute of Technology 2023
Online Access:https://hdl.handle.net/1721.1/150296