GaN Memory Operational at 300 °C

National Aeronautics and Space Administration (NASA)

书目详细资料
Main Authors:	Yuan, Mengyang, Xie, Qingyun, Niroula, John, Chowdhury, Nadim, Palacios, Tomas
其他作者:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
格式:	文件
出版:	Institute of Electrical and Electronics Engineers (IEEE) 2023
主题:	Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
在线阅读:	https://hdl.handle.net/1721.1/150479

因特网

https://hdl.handle.net/1721.1/150479