High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology

National Aeronautics and Space Administration (NASA)

Bibliographic Details
Main Authors:	Yuan, Mengyang, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S., Chowdhury, Nadim, Palacios, Tomas
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Published:	IEEE 2023
Online Access:	https://hdl.handle.net/1721.1/150480

Internet

https://hdl.handle.net/1721.1/150480