Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform

Department of Energy (DOE)

Bibliographic Details
Main Authors:	Xie, Qingyun, Yuan, Mengyang, Niroula, John, Greer, James A., Rajput, Nitul S., Chowdhury, Nadim, Palacios, Tomas
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Published:	IEEE 2023
Online Access:	https://hdl.handle.net/1721.1/150552

Internet

https://hdl.handle.net/1721.1/150552