Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform
Department of Energy (DOE)
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
IEEE
2023
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| Online Access: | https://hdl.handle.net/1721.1/150552 |
| _version_ | 1826218155822809088 |
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| author | Xie, Qingyun Yuan, Mengyang Niroula, John Greer, James A. Rajput, Nitul S. Chowdhury, Nadim Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Xie, Qingyun Yuan, Mengyang Niroula, John Greer, James A. Rajput, Nitul S. Chowdhury, Nadim Palacios, Tomas |
| author_sort | Xie, Qingyun |
| collection | MIT |
| description | Department of Energy (DOE) |
| first_indexed | 2024-09-23T17:15:17Z |
| format | Article |
| id | mit-1721.1/150552 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T17:15:17Z |
| publishDate | 2023 |
| publisher | IEEE |
| record_format | dspace |
| spelling | mit-1721.1/1505522023-04-25T03:00:44Z Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform Xie, Qingyun Yuan, Mengyang Niroula, John Greer, James A. Rajput, Nitul S. Chowdhury, Nadim Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Department of Energy (DOE) National Aeronautics and Space Administration (NASA) Intel Corp. 2023-04-24T15:03:37Z 2023-04-24T15:03:37Z 2022-12-03 Article http://purl.org/eprint/type/ConferencePaper https://hdl.handle.net/1721.1/150552 Xie, Qingyun, Yuan, Mengyang, Niroula, John, Greer, James A., Rajput, Nitul S. et al. 2022. "Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform." 2022 International Electron Devices Meeting (IEDM). 10.1109/iedm45625.2022.10019401 2022 International Electron Devices Meeting (IEDM) Creative Commons Attribution-Noncommercial-Share Alike https://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf IEEE Qingyun Xie |
| spellingShingle | Xie, Qingyun Yuan, Mengyang Niroula, John Greer, James A. Rajput, Nitul S. Chowdhury, Nadim Palacios, Tomas Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform |
| title | Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform |
| title_full | Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform |
| title_fullStr | Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform |
| title_full_unstemmed | Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform |
| title_short | Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform |
| title_sort | highly scaled self aligned gan complementary technology on a gan on si platform |
| url | https://hdl.handle.net/1721.1/150552 |
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