Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
National Aeronautics and Space Administration (NASA)
Main Authors: | , , , , , , , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2023
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Subjects: | |
Online Access: | https://hdl.handle.net/1721.1/151793 |