Switching Dynamics in Ferroelectric Hf₀.₅Zr₀.₅O₂ Devices: Experiments and Models
Ferroelectric Hf₀.₅Zr₀.₅O₂ (FE-HZO) has breathed new life into the field of ferroelectric research, boasting exceptional physical properties, such as compatibility with existing semiconductor processes, highly scalable thickness, and prominent FE properties. As a result, this intriguing material has...
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Massachusetts Institute of Technology
2023
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| Online Access: | https://hdl.handle.net/1721.1/152658 https://orcid.org/0000-0001-8054-6430 |