Switching Dynamics in Ferroelectric Hf₀.₅Zr₀.₅O₂ Devices: Experiments and Models

Switching Dynamics in Ferroelectric Hf₀.₅Zr₀.₅O₂ Devices: Experiments and Models

Ferroelectric Hf₀.₅Zr₀.₅O₂ (FE-HZO) has breathed new life into the field of ferroelectric research, boasting exceptional physical properties, such as compatibility with existing semiconductor processes, highly scalable thickness, and prominent FE properties. As a result, this intriguing material has...

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Bibliographic Details
Main Author:	Kim, Taekyong
Other Authors:	del Alamo, Jesús A.
Format:	Thesis
Published:	Massachusetts Institute of Technology 2023
Online Access:	https://hdl.handle.net/1721.1/152658 https://orcid.org/0000-0001-8054-6430

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