Vacuum Transistors Based on III-Nitrides Field Emitter Arrays with Self-Aligned Gate
Vacuum electronics are promising future high-frequency and harsh-environment devices thanks to their scattering-free and radiation-robust vacuum channels. Field-emission vacuum transistors based on silicon and metals have been demonstrated over past 30 years, however the power consumption and long-t...
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Massachusetts Institute of Technology
2023
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| Online Access: | https://hdl.handle.net/1721.1/152864 https://orcid.org/0000-0002-9936-1732 |