Simulation Modelling of Silicon Gated Field Emitter Based Electronic Circuits

Simulation Modelling of Silicon Gated Field Emitter Based Electronic Circuits

Vacuum transistors (VTs) are promising candidates in electronics due to their fast response and ability to function in harsh environments. In this study, several oscillator and logic gate circuit simulations using VTs are demonstrated. Silicon-gated field emitter arrays (Si-GFEAs) with 1000 &tim...

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Bibliographic Details
Main Authors: Hay, Robert, Bhattacharya, Ranajoy, Chern, Winston, Rughoobur, Girish, Akinwande, Akintunde I., Browning, Jim
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Published: Multidisciplinary Digital Publishing Institute 2023
Online Access:https://hdl.handle.net/1721.1/153161

Internet

https://hdl.handle.net/1721.1/153161

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