Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating heterostructures is by heteroepitaxy, in which epitaxy is per...

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Bibliographic Details
Main Authors: Ji, Jongho, Yang, Jeong Yong, Lee, Sangho, Kim, Seokgi, Yeom, Min Jae, Lee, Gyuhyung, Shin, Heechang, Bae, Sang-Hoon, Ahn, Jong-Hyun, Kim, Sungkyu, Kim, Jeehwan, Yoo, Geonwook, Kum, Hyun S.
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:English
Published: Springer Science and Business Media LLC 2024
Online Access:https://hdl.handle.net/1721.1/153555

Internet

https://hdl.handle.net/1721.1/153555

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