Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors
Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating heterostructures is by heteroepitaxy, in which epitaxy is per...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Springer Science and Business Media LLC
2024
|
| Online Access: | https://hdl.handle.net/1721.1/153555 |
| _version_ | 1826198156012945408 |
|---|---|
| author | Ji, Jongho Yang, Jeong Yong Lee, Sangho Kim, Seokgi Yeom, Min Jae Lee, Gyuhyung Shin, Heechang Bae, Sang-Hoon Ahn, Jong-Hyun Kim, Sungkyu Kim, Jeehwan Yoo, Geonwook Kum, Hyun S. |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Ji, Jongho Yang, Jeong Yong Lee, Sangho Kim, Seokgi Yeom, Min Jae Lee, Gyuhyung Shin, Heechang Bae, Sang-Hoon Ahn, Jong-Hyun Kim, Sungkyu Kim, Jeehwan Yoo, Geonwook Kum, Hyun S. |
| author_sort | Ji, Jongho |
| collection | MIT |
| description | Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating heterostructures is by heteroepitaxy, in which epitaxy is performed on crystallographically different materials. However, epitaxial limitations in monolithic growth of dissimilar materials prevent implementation of high quality heterostructures, such as complex-oxides on conventional semiconductor platforms (Si, III-V and III-N). In this work, we demonstrate gallium nitride (GaN) high-electron-mobility transistors with crystalline complex-oxide material enabled by heterogeneous integration through epitaxial lift-off and direct stacking. We successfully integrate high-κ complex-oxide SrTiO<jats:sub>3</jats:sub> in freestanding membrane form with GaN heterostructure via a simple transfer process as the gate oxide. The fabricated device shows steep subthreshold swing close to the Boltzmann limit, along with negligible hysteresis and low dynamic on-resistance, indicating very low defect density between the SrTiO<jats:sub>3</jats:sub> gate oxide and GaN heterostructure. Our results show that heterogeneous integration through direct material stacking is a promising route towards fabricating functional heterostructures not possible by conventional epitaxy. |
| first_indexed | 2024-09-23T11:00:04Z |
| format | Article |
| id | mit-1721.1/153555 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:00:04Z |
| publishDate | 2024 |
| publisher | Springer Science and Business Media LLC |
| record_format | dspace |
| spelling | mit-1721.1/1535552024-09-20T19:12:23Z Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors Ji, Jongho Yang, Jeong Yong Lee, Sangho Kim, Seokgi Yeom, Min Jae Lee, Gyuhyung Shin, Heechang Bae, Sang-Hoon Ahn, Jong-Hyun Kim, Sungkyu Kim, Jeehwan Yoo, Geonwook Kum, Hyun S. Massachusetts Institute of Technology. Department of Mechanical Engineering Massachusetts Institute of Technology. Research Laboratory of Electronics Massachusetts Institute of Technology. Department of Materials Science and Engineering Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating heterostructures is by heteroepitaxy, in which epitaxy is performed on crystallographically different materials. However, epitaxial limitations in monolithic growth of dissimilar materials prevent implementation of high quality heterostructures, such as complex-oxides on conventional semiconductor platforms (Si, III-V and III-N). In this work, we demonstrate gallium nitride (GaN) high-electron-mobility transistors with crystalline complex-oxide material enabled by heterogeneous integration through epitaxial lift-off and direct stacking. We successfully integrate high-κ complex-oxide SrTiO<jats:sub>3</jats:sub> in freestanding membrane form with GaN heterostructure via a simple transfer process as the gate oxide. The fabricated device shows steep subthreshold swing close to the Boltzmann limit, along with negligible hysteresis and low dynamic on-resistance, indicating very low defect density between the SrTiO<jats:sub>3</jats:sub> gate oxide and GaN heterostructure. Our results show that heterogeneous integration through direct material stacking is a promising route towards fabricating functional heterostructures not possible by conventional epitaxy. 2024-02-22T21:35:42Z 2024-02-22T21:35:42Z 2024-01-19 2024-02-22T21:29:25Z Article http://purl.org/eprint/type/JournalArticle 2731-3395 https://hdl.handle.net/1721.1/153555 Ji, J., Yang, J.Y., Lee, S. et al. Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors. Commun Eng 3, 15 (2024). en 10.1038/s44172-024-00161-z Communications Engineering Creative Commons Attribution https://creativecommons.org/licenses/by/4.0/ application/pdf Springer Science and Business Media LLC Springer Nature |
| spellingShingle | Ji, Jongho Yang, Jeong Yong Lee, Sangho Kim, Seokgi Yeom, Min Jae Lee, Gyuhyung Shin, Heechang Bae, Sang-Hoon Ahn, Jong-Hyun Kim, Sungkyu Kim, Jeehwan Yoo, Geonwook Kum, Hyun S. Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors |
| title | Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors |
| title_full | Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors |
| title_fullStr | Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors |
| title_full_unstemmed | Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors |
| title_short | Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors |
| title_sort | heterogeneous integration of high k complex oxide gate dielectrics on wide band gap high electron mobility transistors |
| url | https://hdl.handle.net/1721.1/153555 |
| work_keys_str_mv | AT jijongho heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT yangjeongyong heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT leesangho heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT kimseokgi heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT yeomminjae heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT leegyuhyung heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT shinheechang heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT baesanghoon heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT ahnjonghyun heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT kimsungkyu heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT kimjeehwan heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT yoogeonwook heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors AT kumhyuns heterogeneousintegrationofhighkcomplexoxidegatedielectricsonwidebandgaphighelectronmobilitytransistors |