Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors
Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating heterostructures is by heteroepitaxy, in which epitaxy is per...
Main Authors: | Ji, Jongho, Yang, Jeong Yong, Lee, Sangho, Kim, Seokgi, Yeom, Min Jae, Lee, Gyuhyung, Shin, Heechang, Bae, Sang-Hoon, Ahn, Jong-Hyun, Kim, Sungkyu, Kim, Jeehwan, Yoo, Geonwook, Kum, Hyun S. |
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其他作者: | Massachusetts Institute of Technology. Department of Mechanical Engineering |
格式: | 文件 |
语言: | English |
出版: |
Springer Science and Business Media LLC
2024
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在线阅读: | https://hdl.handle.net/1721.1/153555 |
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