Atomic layer-by-layer etching of graphene directly grown on SrTiO3 substrates for high-yield remote epitaxy and lift-off

Atomic layer-by-layer etching of graphene directly grown on SrTiO3 substrates for high-yield remote epitaxy and lift-off

Epitaxial lift-off techniques, which aim to separate ultrathin single-crystalline epitaxial layers off of the substrate, are becoming increasingly important due to the need of lightweight and flexible devices for heterogeneously integrated ultracompact semiconductor platforms and bioelectronics. Rem...

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Bibliographic Details
Main Authors: Kim, Ki Seok, Kang, Ji Eun, Chen, Peng, Kim, Sungkyu, Ji, Jongho, Yeom, Geun Young, Kim, Jeehwan, Kum, Hyun S.
Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics
Format: Article
Language:English
Published: AIP Publishing 2024
Subjects:
General Engineering
General Materials Science
Online Access:https://hdl.handle.net/1721.1/153571

Internet

https://hdl.handle.net/1721.1/153571

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