Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation

Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation

Compound semiconductors have superior material properties over silicon, making them good candidates for optoelectronics and power electronics. As the need for electronics with higher flexibility and smaller size increases, lift-off methods for fabricating freestanding compound semiconductors are dev...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक:	Liu, Yunpeng
अन्य लेखक:	Kim, Jeehwan
स्वरूप:	थीसिस
प्रकाशित:	Massachusetts Institute of Technology 2024
ऑनलाइन पहुंच:	https://hdl.handle.net/1721.1/155856

समान संसाधन

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
द्वारा: Chua, Soo-Jin, और अन्य
प्रकाशित: (2003)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
द्वारा: Song, T.L., और अन्य
प्रकाशित: (2003)

InGaN quantum dots grown by MOVPE via a droplet epitaxy route
द्वारा: Rice, J, और अन्य
प्रकाशित: (2004)

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
द्वारा: Holmes, M, और अन्य
प्रकाशित: (2012)

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
द्वारा: Holmes, M, और अन्य
प्रकाशित: (2012)

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
द्वारा: Oliver, R, और अन्य
प्रकाशित: (2003)

Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids
द्वारा: Amélie Dussaigne, और अन्य
प्रकाशित: (2024-12-01)

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
द्वारा: Hartono, Haryono, और अन्य
प्रकाशित: (2004)

InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC
द्वारा: Bosch, Julien, और अन्य
प्रकाशित: (2023)

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
द्वारा: Taylor, R, और अन्य
प्रकाशित: (2005)

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
द्वारा: Mallard, R, और अन्य
प्रकाशित: (1989)

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
द्वारा: Mallard, R, और अन्य
प्रकाशित: (1989)

Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy
द्वारा: Oliver, R, और अन्य
प्रकाशित: (2013)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
द्वारा: Zhang, Xueliang, और अन्य
प्रकाशित: (2014)

Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer
द्वारा: Hartono, Haryono, और अन्य
प्रकाशित: (2005)

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
द्वारा: Zhu, T, और अन्य
प्रकाशित: (2013)

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
द्वारा: Park, Y, और अन्य
प्रकाशित: (2010)

Growth modes in heteroepitaxy of InGaN on GaN
द्वारा: Oliver, R, और अन्य
प्रकाशित: (2005)

Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
द्वारा: Mahat, Mohamad Raqif, और अन्य
प्रकाशित: (2020)

Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN
द्वारा: Takuo Sasaki, और अन्य
प्रकाशित: (2024-01-01)

Elastic constants of GaN grown by the oxide vapor phase epitaxy method
द्वारा: Hiroki Fukuda, और अन्य
प्रकाशित: (2023-01-01)

Luminescence properties of isolated InGaN/GaN quantum dots
द्वारा: Martin, R, और अन्य
प्रकाशित: (2005)

Effects of indium segregation and strain on near-infrared optical absorption in InGaN/GaN quantum wells
द्वारा: Haddou El Ghazi, और अन्य
प्रकाशित: (2024-12-01)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
द्वारा: Whiteside, Matthew, और अन्य
प्रकाशित: (2021)

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
द्वारा: Kyaw, Z., और अन्य
प्रकाशित: (2012)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
द्वारा: Oliver, R, और अन्य
प्रकाशित: (2004)

Carrier localization mechanisms in InGaN/GaN quantum wells
द्वारा: Watson-Parris, D, और अन्य
प्रकाशित: (2011)

Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
द्वारा: Ming-Hsien Wu, और अन्य
प्रकाशित: (2012-01-01)

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
द्वारा: Na, J, और अन्य
प्रकाशित: (2005)

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
द्वारा: Na, J, और अन्य
प्रकाशित: (2005)

A hole modulator for InGaN/GaN light-emitting diodes
द्वारा: Zhang, Zi-Hui, और अन्य
प्रकाशित: (2015)

A hole accelerator for InGaN/GaN light-emitting diodes
द्वारा: Zhang, Zi-Hui, और अन्य
प्रकाशित: (2014)

Design and analysis of quasi-vertical multi-fin GaN power devices based on epitaxially grown GaN-on-sapphire
द्वारा: Jeong Woo Hong, और अन्य
प्रकाशित: (2025-03-01)

Remote epitaxy of III-N membranes on amorphous boron nitride
द्वारा: Liu, Yunpeng(Mechanical engineer)Massachusetts Institute of Technology.
प्रकाशित: (2021)

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
द्वारा: Atsushi Kobayashi, और अन्य
प्रकाशित: (2023-01-01)

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
द्वारा: Ravikiran, L., और अन्य
प्रकाशित: (2014)

Dynamics of single InGaN quantum dots
द्वारा: Taylor, R, और अन्य
प्रकाशित: (2004)

Electromagnetic Nanocoils Based on InGaN Nanorings
द्वारा: Ziwen Yan, और अन्य
प्रकाशित: (2025-02-01)

InGaN quantum dots for micro-LEDs
द्वारा: Lai Wang, और अन्य
प्रकाशित: (2024-10-01)

Electrically driven single InGaN/GaN quantum dot emission
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2008)