High performance germanium on silicon photodiodes for back-end-of-line photonic integration

High performance germanium on silicon photodiodes for back-end-of-line photonic integration

Integration of near-infrared photodetectors in the back-end-of-line requires low temperature growth of Ge (<450 °C). We have fabricated high performance, vertical incidence Ge-on-Si photodiodes under thermal budget constraints with as-grown diodes achieving an internal quantum efficiency (IQE) of...

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Bibliographic Details
Main Authors: Marzen, S, Postelnicu, E, Michel, J, Wada, K, Kimerling, LC
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: AIP Publishing 2024
Online Access:https://hdl.handle.net/1721.1/156903

Internet

https://hdl.handle.net/1721.1/156903

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