High performance germanium on silicon photodiodes for back-end-of-line photonic integration
Integration of near-infrared photodetectors in the back-end-of-line requires low temperature growth of Ge (<450 °C). We have fabricated high performance, vertical incidence Ge-on-Si photodiodes under thermal budget constraints with as-grown diodes achieving an internal quantum efficiency (IQE) of...
| Main Authors: | , , , , |
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| 其他作者: | |
| 格式: | 文件 |
| 语言: | English |
| 出版: |
AIP Publishing
2024
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| 在线阅读: | https://hdl.handle.net/1721.1/156903 |