High performance germanium on silicon photodiodes for back-end-of-line photonic integration
Integration of near-infrared photodetectors in the back-end-of-line requires low temperature growth of Ge (<450 °C). We have fabricated high performance, vertical incidence Ge-on-Si photodiodes under thermal budget constraints with as-grown diodes achieving an internal quantum efficiency (IQE) of...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing
2024
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| Online Access: | https://hdl.handle.net/1721.1/156903 |
| _version_ | 1824457961128329216 |
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| author | Marzen, S Postelnicu, E Michel, J Wada, K Kimerling, LC |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Marzen, S Postelnicu, E Michel, J Wada, K Kimerling, LC |
| author_sort | Marzen, S |
| collection | MIT |
| description | Integration of near-infrared photodetectors in the back-end-of-line requires low temperature growth of Ge (<450 °C). We have fabricated high performance, vertical incidence Ge-on-Si photodiodes under thermal budget constraints with as-grown diodes achieving an internal quantum efficiency (IQE) of 38% and a dark current density of Jd = 272 μA/cm2 at a reverse bias of Vr = 5 V and a wavelength of λ = 1310 nm. The photodiode design incorporates a remote heterointerface, demonstrating that Ge material quality is sufficiently high for minority carriers to diffuse to the Ge/Si interface. Post-growth annealing improves device performance, including 500 °C 3 h exposure that improves IQE to 57% and Jd = 165
A/cm2. Low-temperature grown Ge-on-Si photodiodes give comparable performance to diodes processed at high temperatures despite thermal budget constraints. |
| first_indexed | 2024-09-23T09:35:09Z |
| format | Article |
| id | mit-1721.1/156903 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2025-02-19T04:18:18Z |
| publishDate | 2024 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1569032024-12-23T05:36:16Z High performance germanium on silicon photodiodes for back-end-of-line photonic integration Marzen, S Postelnicu, E Michel, J Wada, K Kimerling, LC Massachusetts Institute of Technology. Department of Materials Science and Engineering Integration of near-infrared photodetectors in the back-end-of-line requires low temperature growth of Ge (<450 °C). We have fabricated high performance, vertical incidence Ge-on-Si photodiodes under thermal budget constraints with as-grown diodes achieving an internal quantum efficiency (IQE) of 38% and a dark current density of Jd = 272 μA/cm2 at a reverse bias of Vr = 5 V and a wavelength of λ = 1310 nm. The photodiode design incorporates a remote heterointerface, demonstrating that Ge material quality is sufficiently high for minority carriers to diffuse to the Ge/Si interface. Post-growth annealing improves device performance, including 500 °C 3 h exposure that improves IQE to 57% and Jd = 165 A/cm2. Low-temperature grown Ge-on-Si photodiodes give comparable performance to diodes processed at high temperatures despite thermal budget constraints. 2024-09-19T15:22:30Z 2024-09-19T15:22:30Z 2023-09-11 2024-09-19T15:17:42Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/156903 S. Marzen, E. Postelnicu, J. Michel, K. Wada, L. C. Kimerling; High performance germanium on silicon photodiodes for back-end-of-line photonic integration. Appl. Phys. Lett. 11 September 2023; 123 (11): 111105. en 10.1063/5.0153651 Applied Physics Letters Creative Commons Attribution https://creativecommons.org/licenses/by/4.0/ application/pdf AIP Publishing AIP Publishing |
| spellingShingle | Marzen, S Postelnicu, E Michel, J Wada, K Kimerling, LC High performance germanium on silicon photodiodes for back-end-of-line photonic integration |
| title | High performance germanium on silicon photodiodes for back-end-of-line photonic integration |
| title_full | High performance germanium on silicon photodiodes for back-end-of-line photonic integration |
| title_fullStr | High performance germanium on silicon photodiodes for back-end-of-line photonic integration |
| title_full_unstemmed | High performance germanium on silicon photodiodes for back-end-of-line photonic integration |
| title_short | High performance germanium on silicon photodiodes for back-end-of-line photonic integration |
| title_sort | high performance germanium on silicon photodiodes for back end of line photonic integration |
| url | https://hdl.handle.net/1721.1/156903 |
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