Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO

Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO

Vacancies are generated in semiconductor devices while operating in the space radiation environment, impacting semiconductor carrier concentrations and dynamics. Positron annihilation lifetime spectroscopy (PALS) is used to probe these defect concentrations in bulk grown GaN, GaP, InAs, InP, Si, MgO...

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Bibliographic Details
Main Authors: Logan, JV, Woller, KB, Webster, PT, Morath, CP, Short, MP
Other Authors: Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Format: Article
Language:English
Published: AIP Publishing 2024
Online Access:https://hdl.handle.net/1721.1/156906

Internet

https://hdl.handle.net/1721.1/156906

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