Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO
Vacancies are generated in semiconductor devices while operating in the space radiation environment, impacting semiconductor carrier concentrations and dynamics. Positron annihilation lifetime spectroscopy (PALS) is used to probe these defect concentrations in bulk grown GaN, GaP, InAs, InP, Si, MgO...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing
2024
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| Online Access: | https://hdl.handle.net/1721.1/156906 |
| _version_ | 1826217774130659328 |
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| author | Logan, JV Woller, KB Webster, PT Morath, CP Short, MP |
| author2 | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Logan, JV Woller, KB Webster, PT Morath, CP Short, MP |
| author_sort | Logan, JV |
| collection | MIT |
| description | Vacancies are generated in semiconductor devices while operating in the space radiation environment, impacting semiconductor carrier concentrations and dynamics. Positron annihilation lifetime spectroscopy (PALS) is used to probe these defect concentrations in bulk grown GaN, GaP, InAs, InP, Si, MgO, and ZnO both as-grown and as a function of 2–4 MeV proton irradiation. All samples were irradiated to yield a common initial damage production and characterized identically. In as-grown samples, PALS reveals vacancy concentrations above the saturation limit in the oxides, disabling further analysis. As a function of dose, of the materials in which defect accumulation could be probed, it is observed that GaN is the most resistant to the accumulation of defects (attributed to the Ga vacancies) and Si is the least. GaP (attributed to the Ga vacancy) and InAs exhibit slightly higher rates of vacancy accumulation than GaN. InP exhibits high defect accumulation rates approaching that of Si. This information is key to understanding the operation of a diverse set of semiconductors in the space radiation environment. |
| first_indexed | 2024-09-23T17:08:57Z |
| format | Article |
| id | mit-1721.1/156906 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2025-02-19T04:26:23Z |
| publishDate | 2024 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1569062025-01-03T04:10:27Z Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO Logan, JV Woller, KB Webster, PT Morath, CP Short, MP Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Vacancies are generated in semiconductor devices while operating in the space radiation environment, impacting semiconductor carrier concentrations and dynamics. Positron annihilation lifetime spectroscopy (PALS) is used to probe these defect concentrations in bulk grown GaN, GaP, InAs, InP, Si, MgO, and ZnO both as-grown and as a function of 2–4 MeV proton irradiation. All samples were irradiated to yield a common initial damage production and characterized identically. In as-grown samples, PALS reveals vacancy concentrations above the saturation limit in the oxides, disabling further analysis. As a function of dose, of the materials in which defect accumulation could be probed, it is observed that GaN is the most resistant to the accumulation of defects (attributed to the Ga vacancies) and Si is the least. GaP (attributed to the Ga vacancy) and InAs exhibit slightly higher rates of vacancy accumulation than GaN. InP exhibits high defect accumulation rates approaching that of Si. This information is key to understanding the operation of a diverse set of semiconductors in the space radiation environment. 2024-09-19T19:17:05Z 2024-09-19T19:17:05Z 2023-12-14 2024-09-19T19:10:37Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/156906 J. V. Logan, K. B. Woller, P. T. Webster, C. P. Morath, M. P. Short; Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO. J. Appl. Phys. 14 December 2023; 134 (22): 225701. en 10.1063/5.0147324 Journal of Applied Physics Creative Commons Attribution https://creativecommons.org/licenses/by/4.0/ application/pdf AIP Publishing AIP Publishing |
| spellingShingle | Logan, JV Woller, KB Webster, PT Morath, CP Short, MP Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO |
| title | Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO |
| title_full | Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO |
| title_fullStr | Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO |
| title_full_unstemmed | Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO |
| title_short | Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO |
| title_sort | open volume defect accumulation with irradiation in gan gap inas inp si zno and mgo |
| url | https://hdl.handle.net/1721.1/156906 |
| work_keys_str_mv | AT loganjv openvolumedefectaccumulationwithirradiationingangapinasinpsiznoandmgo AT wollerkb openvolumedefectaccumulationwithirradiationingangapinasinpsiznoandmgo AT websterpt openvolumedefectaccumulationwithirradiationingangapinasinpsiznoandmgo AT morathcp openvolumedefectaccumulationwithirradiationingangapinasinpsiznoandmgo AT shortmp openvolumedefectaccumulationwithirradiationingangapinasinpsiznoandmgo |