Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer
InN has been grown on GaN with a thin intermediate layer of InGaN by metalorganic chemical vapor deposition (MOCVD) to further enhance indium incorporation in subsequent InGaN layer. Trimethylindium (TMI) and ammonia (NH₃) were used as the source for InN growth and transmission electron microscopy (...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2005
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/29819 |