Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer
InN has been grown on GaN with a thin intermediate layer of InGaN by metalorganic chemical vapor deposition (MOCVD) to further enhance indium incorporation in subsequent InGaN layer. Trimethylindium (TMI) and ammonia (NH₃) were used as the source for InN growth and transmission electron microscopy (...
| Autori principali: | , , , |
|---|---|
| Natura: | Articolo |
| Lingua: | English |
| Pubblicazione: |
2005
|
| Soggetti: | |
| Accesso online: | http://hdl.handle.net/1721.1/29819 |