Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction

Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction

We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods grown on n-GaN sample using hydrothermal synthesis at low temperature (100°). Th...

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Bibliographic Details
Main Authors: Quang, Le Hong, Chua, Soo-Jin, Fitzgerald, Eugene A.
Format: Article
Language:English
Published: 2005
Subjects:
Gallium Nitride
Metal Insulator Semiconductor structure
Nanostructure
Zinc compounds
Online Access:http://hdl.handle.net/1721.1/29820

Internet

http://hdl.handle.net/1721.1/29820

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