Native Point Defects in yttria as a High-Dielectric-Constant Gate Oxide Material: A First-Principles Study
Yttria (Y₂O₃) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is essential to understand the behavior of the material. We used the first-principles pseudopotential method to study t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2005
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/29823 |