TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy. It was found that when the proportion of Ge relat...

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Bibliographic Details
Main Authors: Chew, Han Guan, Choi, Wee Kiong, Foo, Y.L., Chim, Wai Kin, Fitzgerald, Eugene A., Zheng, F., Samanta, S.K., Voon, Z.J., Seow, K.C.
Format: Article
Language:English
Published: 2005
Subjects:
Germanium nanocrystals
Silicon reduction
Germanium diffusion
Online Access:http://hdl.handle.net/1721.1/29824

Internet

http://hdl.handle.net/1721.1/29824

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