Effect of Oxygen on Ni-Silicided FUSI Metal Gate
Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively reduce the gate thickness further due to the poly-depletion effect. Fully silici...
| मुख्य लेखकों: | , , , , , |
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| स्वरूप: | लेख |
| भाषा: | English |
| प्रकाशित: |
2005
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| विषय: | |
| ऑनलाइन पहुंच: | http://hdl.handle.net/1721.1/29825 |