Fabrication and Characterization of Nano-porous GaN Template for Strain Relaxed GaN Growth
A simple and cost-effective Si-doped porous GaN is fabricated by UV-enhanced electrochemical etching. An optimum current density of 20 mA/cm² applied for an hour in dilute NaOH solution produces a high density of uniform pores. Cross-section TEM reveals that etching takes place along the (0001) dire...
| Main Authors: | , , , |
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| 格式: | 文件 |
| 语言: | English |
| 出版: |
2007
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| 主题: | |
| 在线阅读: | http://hdl.handle.net/1721.1/35828 |