Fabrication and Characterization of Nano-porous GaN Template for Strain Relaxed GaN Growth

Fabrication and Characterization of Nano-porous GaN Template for Strain Relaxed GaN Growth

A simple and cost-effective Si-doped porous GaN is fabricated by UV-enhanced electrochemical etching. An optimum current density of 20 mA/cm² applied for an hour in dilute NaOH solution produces a high density of uniform pores. Cross-section TEM reveals that etching takes place along the (0001) dire...

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Bibliographic Details
Main Authors:	Hartono, Haryono, Soh, C.B., Chua, Soo-Jin, Fitzgerald, Eugene A.
Format:	Article
Language:	English
Published:	2007
Subjects:	Photoelectrochemical Etching Porous GaN Strain Relaxation Epitaxial Growth
Online Access:	http://hdl.handle.net/1721.1/35828

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