Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate
Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively reduce the gate thickness further due to the poly-depletion effect. Fully silicide...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/35833 |