APA (7th ed.) Citation

Yu, H., Pey, K. L., Choi, W. K., Chi, D., Fitzgerald, E. A., & Antoniadis, D. A. (2007). Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate.

Chicago Style (17th ed.) Citation

Yu, Hongpeng, Kin Leong Pey, Wee Kiong Choi, D.Z Chi, Eugene A. Fitzgerald, and Dimitri A. Antoniadis. Workfunction Tuning of N-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate. 2007.

MLA (9th ed.) Citation

Yu, Hongpeng, et al. Workfunction Tuning of N-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate. 2007.