Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN layers, each 200 nm thick with the In content increased in each layer, and w...
| Hoofdauteurs: | , , |
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| Formaat: | Artikel |
| Taal: | en_US |
| Gepubliceerd in: |
2003
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| Onderwerpen: | |
| Online toegang: | http://hdl.handle.net/1721.1/3723 |