The interfacial reaction of Ni on (100) Si₁â‚‹xGex (x=0, 0.25) and (111) Ge

The interfacial reaction of Ni on (100) Si₁₋xGex (x=0, 0.25) and (111) Ge

The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using...

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Bibliographic Details
Main Authors: Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Pitera, Arthur J., Lee, Minjoo L., Chi, D.Z.
Format: Article
Language:en_US
Published: 2003
Subjects:
Ni-germanosilicide
in situ annealing
Online Access:http://hdl.handle.net/1721.1/3724

Internet

http://hdl.handle.net/1721.1/3724

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