The interfacial reaction of Ni on (100) Si₁â‚‹xGex (x=0, 0.25) and (111) Ge

The interfacial reaction of Ni on (100) Si₁₋xGex (x=0, 0.25) and (111) Ge

The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using...

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Hlavní autoři: Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Pitera, Arthur J., Lee, Minjoo L., Chi, D.Z.
Médium: Článek
Jazyk:en_US
Vydáno: 2003
Témata:
Ni-germanosilicide
in situ annealing
On-line přístup:http://hdl.handle.net/1721.1/3724
Popis
Shrnutí:The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁₋xGex)₂, Ni(Si₁₋yGey), and Si₁₋zGez (z>y>x) was formed; whereas only Ni₃(Si₁₋xGex)₂ and Ni(Si₁₋yGey>) were observed by in situ annealing.

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