The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2003
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/3724 |
| _version_ | 1826201084622798848 |
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| author | Jin, Lijuan Pey, Kin Leong Choi, Wee Kiong Fitzgerald, Eugene A. Antoniadis, Dimitri A. Pitera, Arthur J. Lee, Minjoo L. Chi, D.Z. |
| author_facet | Jin, Lijuan Pey, Kin Leong Choi, Wee Kiong Fitzgerald, Eugene A. Antoniadis, Dimitri A. Pitera, Arthur J. Lee, Minjoo L. Chi, D.Z. |
| author_sort | Jin, Lijuan |
| collection | MIT |
| description | The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁âxGex)₂, Ni(Si₁âyGey), and Si₁âzGez (z>y>x) was formed; whereas only Ni₃(Si₁âxGex)₂ and Ni(Si₁âyGey>) were observed by in situ annealing. |
| first_indexed | 2024-09-23T11:46:20Z |
| format | Article |
| id | mit-1721.1/3724 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:46:20Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | mit-1721.1/37242019-04-10T18:39:31Z The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge Jin, Lijuan Pey, Kin Leong Choi, Wee Kiong Fitzgerald, Eugene A. Antoniadis, Dimitri A. Pitera, Arthur J. Lee, Minjoo L. Chi, D.Z. Ni-germanosilicide in situ annealing The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁âxGex)₂, Ni(Si₁âyGey), and Si₁âzGez (z>y>x) was formed; whereas only Ni₃(Si₁âxGex)₂ and Ni(Si₁âyGey>) were observed by in situ annealing. Singapore-MIT Alliance (SMA) 2003-11-24T20:54:41Z 2003-11-24T20:54:41Z 2003-01 Article http://hdl.handle.net/1721.1/3724 en_US Advanced Materials for Micro- and Nano-Systems (AMMNS); 1386604 bytes application/pdf application/pdf |
| spellingShingle | Ni-germanosilicide in situ annealing Jin, Lijuan Pey, Kin Leong Choi, Wee Kiong Fitzgerald, Eugene A. Antoniadis, Dimitri A. Pitera, Arthur J. Lee, Minjoo L. Chi, D.Z. The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge |
| title | The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge |
| title_full | The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge |
| title_fullStr | The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge |
| title_full_unstemmed | The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge |
| title_short | The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge |
| title_sort | interfacial reaction of ni on 100 si₁axgex x 0 0 25 and 111 ge |
| topic | Ni-germanosilicide in situ annealing |
| url | http://hdl.handle.net/1721.1/3724 |
| work_keys_str_mv | AT jinlijuan theinterfacialreactionofnion100si1axgexx0025and111ge AT peykinleong theinterfacialreactionofnion100si1axgexx0025and111ge AT choiweekiong theinterfacialreactionofnion100si1axgexx0025and111ge AT fitzgeraldeugenea theinterfacialreactionofnion100si1axgexx0025and111ge AT antoniadisdimitria theinterfacialreactionofnion100si1axgexx0025and111ge AT piteraarthurj theinterfacialreactionofnion100si1axgexx0025and111ge AT leeminjool theinterfacialreactionofnion100si1axgexx0025and111ge AT chidz theinterfacialreactionofnion100si1axgexx0025and111ge AT jinlijuan interfacialreactionofnion100si1axgexx0025and111ge AT peykinleong interfacialreactionofnion100si1axgexx0025and111ge AT choiweekiong interfacialreactionofnion100si1axgexx0025and111ge AT fitzgeraldeugenea interfacialreactionofnion100si1axgexx0025and111ge AT antoniadisdimitria interfacialreactionofnion100si1axgexx0025and111ge AT piteraarthurj interfacialreactionofnion100si1axgexx0025and111ge AT leeminjool interfacialreactionofnion100si1axgexx0025and111ge AT chidz interfacialreactionofnion100si1axgexx0025and111ge |