MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in...

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Bibliographic Details
Main Authors: Fitzgerald, Eugene A., Lee, Minjoo L., Leitz, Christopher W., Antoniadis, Dimitri A.
Format: Article
Language:en_US
Published: 2003
Subjects:
SiGe
strained silicon
germanium
MOSFETs
hole mobility
Online Access:http://hdl.handle.net/1721.1/3726

Internet

http://hdl.handle.net/1721.1/3726

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