Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm
GaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing processes. The critical thickness is almost one order thicker than the theoretical prediction by force balance model. The growth process could be sped up by the nitrogen incorporation itself, while the nitrogen in...
| Main Authors: | , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2003
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/3752 |