Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm
GaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing processes. The critical thickness is almost one order thicker than the theoretical prediction by force balance model. The growth process could be sped up by the nitrogen incorporation itself, while the nitrogen in...
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| Format: | Article |
| Language: | en_US |
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2003
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| Online Access: | http://hdl.handle.net/1721.1/3752 |
| _version_ | 1826203924303970304 |
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| author | Wang, S.Z. Yoon, Soon Fatt |
| author_facet | Wang, S.Z. Yoon, Soon Fatt |
| author_sort | Wang, S.Z. |
| collection | MIT |
| description | GaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing processes. The critical thickness is almost one order thicker than the theoretical prediction by force balance model. The growth process could be sped up by the nitrogen incorporation itself, while the nitrogen incorporation could be affected by Beryllium doping. The incorporated nitrogen atoms partly occupy substitutional sites for Arsenic. Some nitrogen atoms are at interstitial sites. Annealing could drastically increase the optical quality of GaAs-based nitrides. As an end of this paper, some preliminary results of InGaAsN/GaAsN/AlGaAs laser diodes are also presented. |
| first_indexed | 2024-09-23T12:45:35Z |
| format | Article |
| id | mit-1721.1/3752 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:45:35Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | mit-1721.1/37522019-04-10T12:16:31Z Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm Wang, S.Z. Yoon, Soon Fatt InGaAsN/GaAs quantum well molecular beam epitaxy laser diode GaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing processes. The critical thickness is almost one order thicker than the theoretical prediction by force balance model. The growth process could be sped up by the nitrogen incorporation itself, while the nitrogen incorporation could be affected by Beryllium doping. The incorporated nitrogen atoms partly occupy substitutional sites for Arsenic. Some nitrogen atoms are at interstitial sites. Annealing could drastically increase the optical quality of GaAs-based nitrides. As an end of this paper, some preliminary results of InGaAsN/GaAsN/AlGaAs laser diodes are also presented. Singapore-MIT Alliance (SMA) 2003-11-29T20:44:27Z 2003-11-29T20:44:27Z 2003-01 Article http://hdl.handle.net/1721.1/3752 en_US Innovation in Manufacturing Systems and Technology (IMST); 619925 bytes application/pdf application/pdf |
| spellingShingle | InGaAsN/GaAs quantum well molecular beam epitaxy laser diode Wang, S.Z. Yoon, Soon Fatt Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm |
| title | Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm |
| title_full | Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm |
| title_fullStr | Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm |
| title_full_unstemmed | Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm |
| title_short | Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm |
| title_sort | preliminary results of ingaasn gaas quantum well laser diodes emitting towards 1 3 µm |
| topic | InGaAsN/GaAs quantum well molecular beam epitaxy laser diode |
| url | http://hdl.handle.net/1721.1/3752 |
| work_keys_str_mv | AT wangsz preliminaryresultsofingaasngaasquantumwelllaserdiodesemittingtowards13μm AT yoonsoonfatt preliminaryresultsofingaasngaasquantumwelllaserdiodesemittingtowards13μm |