GaN Nanopore Arrays: Fabrication and Characterization
GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizi...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://hdl.handle.net/1721.1/3827 |
| _version_ | 1811073557376008192 |
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| author | Wang, Yadong Peng, Chen Sander, Melissa Chua, Soo-Jin Fonstad, Clifton G. Jr. |
| author_facet | Wang, Yadong Peng, Chen Sander, Melissa Chua, Soo-Jin Fonstad, Clifton G. Jr. |
| author_sort | Wang, Yadong |
| collection | MIT |
| description | GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF4-based plasma conditions. Scanning electron microscopy (SEM) analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy (AFM), photoluminescence (PL) and micro-Raman techniques were employed to assess the quality of the etched GaN nanopore surface. Such a cost-effective method to produce nano-patterned GaN template would be useful for growth and fabrication of III-Nitrides based nanostructures and photonic band gap materials. |
| first_indexed | 2024-09-23T09:34:51Z |
| format | Article |
| id | mit-1721.1/3827 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:34:51Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | mit-1721.1/38272019-04-10T12:16:18Z GaN Nanopore Arrays: Fabrication and Characterization Wang, Yadong Peng, Chen Sander, Melissa Chua, Soo-Jin Fonstad, Clifton G. Jr. GaN nanopore arrays inductively coupled plasma etching anodic aluminum oxide pore diameter nanostructures photonic band gap materials GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF4-based plasma conditions. Scanning electron microscopy (SEM) analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy (AFM), photoluminescence (PL) and micro-Raman techniques were employed to assess the quality of the etched GaN nanopore surface. Such a cost-effective method to produce nano-patterned GaN template would be useful for growth and fabrication of III-Nitrides based nanostructures and photonic band gap materials. Singapore-MIT Alliance (SMA) 2003-12-13T16:39:04Z 2003-12-13T16:39:04Z 2004-01 Article http://hdl.handle.net/1721.1/3827 en_US Advanced Materials for Micro- and Nano-Systems (AMMNS); 467419 bytes application/pdf application/pdf |
| spellingShingle | GaN nanopore arrays inductively coupled plasma etching anodic aluminum oxide pore diameter nanostructures photonic band gap materials Wang, Yadong Peng, Chen Sander, Melissa Chua, Soo-Jin Fonstad, Clifton G. Jr. GaN Nanopore Arrays: Fabrication and Characterization |
| title | GaN Nanopore Arrays: Fabrication and Characterization |
| title_full | GaN Nanopore Arrays: Fabrication and Characterization |
| title_fullStr | GaN Nanopore Arrays: Fabrication and Characterization |
| title_full_unstemmed | GaN Nanopore Arrays: Fabrication and Characterization |
| title_short | GaN Nanopore Arrays: Fabrication and Characterization |
| title_sort | gan nanopore arrays fabrication and characterization |
| topic | GaN nanopore arrays inductively coupled plasma etching anodic aluminum oxide pore diameter nanostructures photonic band gap materials |
| url | http://hdl.handle.net/1721.1/3827 |
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